HIGH-ENERGY ION CHANNELING STUDY OF MBE-GROWN GAAS(001) SURFACE-STRUCTURES

被引：5

作者：

NARUSAWA, T

KOBAYASHI, KLI

NAKASHIMA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 02期

关键词：

D O I：

10.1143/JJAP.24.L98

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L98 / L100

页数：3

共 13 条

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