EFFECT OF MICROSTRUCTURAL MATRIX REARRANGEMENTS ON ELECTROLUMINESCENCE OF SIOX-TBF3 FILMS

被引：3

作者：

VLASENKO, NA

ROMANOVA, GP

FENOCHKA, BV

KHOMCHENKO, VS

机构：

[1] Acad of Science of the Ukrainian SSR, Kiev, USSR, Acad of Science of the Ukrainian SSR, Kiev, USSR

来源：

JOURNAL OF LUMINESCENCE | 1988年 / 40-1卷

关键词：

ELECTROLUMINESCENCE; -; MOLECULES; SILICA; SPECTROSCOPY; EMISSION;

D O I：

10.1016/0022-2313(88)90440-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Microstructural matrix rearrangements caused by doping with TbF//3 and annealing of amorphous SiO//x films are investigated. It is shown that the TbF//3 molecules dissociate during the film deposition and Tb substitutes Si in SiO//4/////2 tetrahedra. The trivalent Tb forms after the film annealing, which leads to the appearance of the electroluminescence.

引用

页码：792 / 793

页数：2