THERMOMECHANICAL PROPERTIES OF IC MOLDING COMPOUNDS

被引：39

作者：

BAIR, HE ^{[1
]}

BOYLE, DJ ^{[1
]}

RYAN, JT ^{[1
]}

TAYLOR, CR ^{[1
]}

TIGHE, SC ^{[1
]}

CROUTHAMEL, DL ^{[1
]}

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

来源：

POLYMER ENGINEERING AND SCIENCE | 1990年 / 30卷 / 10期

关键词：

D O I：

10.1002/pen.760301008

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Eight commercial semiconductor grade epoxy compounds that are used to encapsulate 1C (integrated circuit) devices have been evaluated for their ability to minimize the development of thermal stresses which can cause failure during device temperature cycling. Thermal expansion, dynamic modulus and adhesion studies are used to describe the mechanical interaction between the plastic package and the silicon device it surrounds. A “figure of merit” is defined for the development of stress on the 1C device as it is cooled after the packaging process. The stress is shown to be proportional to the product of three terms: (αp‐αs) Ep (Tanch‐T) where αp and αs are the expansion coefficients for the plastic and silicon, respectively, Ep is the modulus of the epoxy and Tanch is the temperature at which the epoxy becomes anchored to the silicon device during transfer molding. In addition, the importance of good adhesion between the epoxy encapsulant and the silicon device to prevent package cracking has been demonstrated by finite element analysis and a novel adhesion test. Copyright © 1990 Society of Plastics Engineers

引用

页码：609 / 617

页数：9

共 11 条

[1]

BAIR HE, 1985, POLYM PREPR-ACS, V26, P10

[2] DSC AND C-13-NMR STUDIES OF THE IMIDAZOLE-ACCELERATED REACTION BETWEEN EPOXIDES AND PHENOLS [J].