Doping of CuInSe2 Crystals: Evidence for Influence of Thermal Defects

被引：10

作者：

Cahen, David ^{[1
]}

Abecassis, Daniel ^{[1
]}

Soltz, David ^{[1
]}

机构：

[1] Weizmann Inst Sci, Dept Struct Chem, IL-76100 Rehovot, Israel

来源：

CHEMISTRY OF MATERIALS | 1989年 / 1卷 / 02期

关键词：

D O I：

10.1021/cm00002a008

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Annealing of p-CuInSe2 crystals at low (250-300 degrees C) and high (600-650 degrees C) temperatures in the presence of CuInSe2 powder with a variety of (native) dopants showed the temperature rather than the nature of the dopant to be the major factor in determining the resultant carrier type and concentration. Experiments without added dopant indicate, for samples from a different boule, that type conversion occurs upon annealing between 550 and 650 degrees C. These results can be explained by thermally induced changes in relative concentrations of intrinsic defects (that were frozen in during crystal cooling) via complex formation and temperature-dependent ionization of defects and their complexes.

引用

页码：202 / 207

页数：6

共 25 条

[1] PHASE-RELATIONS IN THE CU, IN, SE SYSTEM AND THE PROPERTIES OF CULNSE2 SINGLE-CRYSTALS [J].

BACHMANN, KJ ;

FEARHEILEY, M ;

SHING, YH ;

TRAN, N .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :407-409

[2] LUMINESCENCE OF CUINS2 .1. THE BROAD-BAND EMISSION AND ITS DEPENDENCE ON THE DEFECT CHEMISTRY [J].

BINSMA, JJM ;

GILING, LJ ;

BLOEM, J .

JOURNAL OF LUMINESCENCE, 1982, 27 (01) :35-53

[3]

Cahen D., 1987, Ternary and Multinary Compounds. Proceedings of the 7th International Conference, P433

[4] ATOMIC RADII IN TERNARY ADAMANTINES [J].

CAHEN, D .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (01) :103-111

[5] STRUCTURAL AND SOLAR CONVERSION CHARACTERISTICS OF THE (CU2SE)X(IN2SE3)1-X SYSTEM [J].

FOLMER, JCW ;

TURNER, JA ;

NOUFI, R ;

CAHEN, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1319-1327

[6]

HAUPT H, 1977, I PHYS C SER, V35, P5

[7] REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE [J].

HURLE, DTJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) :613-626

[8] HIGH-TEMPERATURE TRANSPORT PROPERTIES OF N-TYPE GAAS [J].

IKOMA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 28 (06) :1474-&

[9] ELECTRON TRAPS IN N-GAAS REVEALED BY HIGH-TEMPERATURE HALL MEASUREMENTS [J].

IKOMA, H ;

WANG, SS .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (02) :512-&

[10] ELECTROPHYSICAL PROPERTIES OF NON-DOPED EPITAXIAL GAAS IN RANGE FROM 10 TO 1100 DEGREESK [J].

KHOKHLOV, VI ;

SIDOROV, YG ;

DVORETSKII, SA .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 25 (01) :311-321

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