DEFECT STATES AND ELECTRONIC-PROPERTIES OF POST-HYDROGENATED CVD AMORPHOUS-SILICON

被引：8

作者：

NAKASHITA, T ^{[1
]}

OSAKA, Y ^{[1
]}

HIROSE, M ^{[1
]}

IMURA, T ^{[1
]}

HIRAKI, A ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 12期

关键词：

D O I：

10.1143/JJAP.22.1766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1766 / 1770

页数：5

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