INFRARED AND RESONANCE RAMAN-SPECTROSCOPIC STUDIES OF SEMICONDUCTORS - DOPED AMORPHOUS-SILICON

被引：6

作者：

HUONG, PV ^{[1
]}

MENCARAGLIA, D ^{[1
]}

ANDRO, P ^{[1
]}

BAIXERAS, J ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE SUPER ELECT,GENIE ELECT LAB,F-91190 GIF SUR YVETTE,FRANCE

来源：

JOURNAL OF MOLECULAR STRUCTURE | 1984年 / 115卷 / MAR期

关键词：

D O I：

10.1016/0022-2860(84)80115-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：473 / 476

页数：4

共 8 条

[1]

GRAJA A, 1981, SOLID STATE COMM, V31, P929

[2]

HUONG PV, 1983, SILICIUM

[3]

HUONG PV, 1982, REV ANAL CHEM, P209

[4]

HUONG PV, 1982, RAMAN SPECTROSCOPY L, P442

[5]

LASCOMBE J, 1964, J CHIM PHYS, V61, P1414

[6] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J].

LUCOVSKY, G .

SOLID STATE COMMUNICATIONS, 1979, 29 (08) :571-576

[7] VIBRATIONAL PROPERTIES OF PROTON-IMPLANTED CRYSTALLINE INP [J].

RIEDE, V ;

NEUMANN, H ;

SOBOTTA, H ;

ASCHERON, C ;

GEIST, V .

SOLID STATE COMMUNICATIONS, 1983, 47 (01) :33-35

[8] INFRARED-SPECTRUM AND STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON [J].

SHANKS, H ;

FANG, CJ ;

LEY, L ;

CARDONA, M ;

DEMOND, FJ ;

KALBITZER, S .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01) :43-56

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