GROWTH OF BETA-SILICON CARBIDE WHISKERS BY THE VLS PROCESS

被引：267

作者：

MILEWSKI, JV ^{[1
]}

GAC, FD ^{[1
]}

PETROVIC, JJ ^{[1
]}

SKAGGS, SR ^{[1
]}

机构：

[1] UNIV CALIF LOS ALAMOS NATL LAB,DIV MAT SCI & TECHNOL,LOS ALAMOS,NM 87545

来源：

关键词：

GLASS MATRIX COMPOSITES - SINGLE CRYSTAL FIBER - VAPOR-LIQUID-SOLID CRYSTAL GROWTH PROCESS;

D O I：

10.1007/BF01026309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1160 / 1166

页数：7

共 9 条

[1] GROWTH OF SIC WHISKERS IN SYSTEM SIO2-C-H2 NUCLEATED BY IRON
BOOTSMA, GA
VERSPUI, G
KNIPPENB.WF
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) : 297 - &
[2] Cutler I. B., 1973, U.S. patent, Patent No. [3,754,076, 3754076]
[3] Knippenberg W.F., 1973, SILICON CARBIDE 1972, P108
[4] Knippendburg W.F., 1969, MATER RES B, V4, P33
[5] PARRATT NJ, 1972, FIBRE REINFORCED MAT
[6] TENSILE MECHANICAL-PROPERTIES OF SIC WHISKERS
PETROVIC, JJ
MILEWSKI, JV
ROHR, DL
GAC, FD
[J]. JOURNAL OF MATERIALS SCIENCE, 1985, 20 (04) : 1167 - 1177
[7] Ryan C.E., 1967, J CRYST GROWTH, V1, P255
[8] SHYNE J. J., 1971, Method of growing silicon carbide whiskers, Patent No. [U. S. Patent, 3622272, 3622272]
[9] WAGNER RS, 1964, APPL PHYS LETT, V4, P39