TE-RELATED RESONANT DX CENTERS IN ALXGA1-X AS ALLOYS UNDER HYDROSTATIC-PRESSURE

被引：9

作者：

SALLESE, JM

RANZ, E

LEROUX, M

PORTAL, JC

GIBART, P

SELMI, A

机构：

[1] Lab. de Phys. du Solide et Energie Solarie, CNRS, Valbonne

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 06期

关键词：

Semiconducting Aluminum Compounds;

D O I：

10.1088/0268-1242/6/6/021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOVPE-grown, Te-doped Al(x)Ga(1-x)As samples (doping level (2-7) x 10(18) cm-3), with 0 < x < 0.3, were investigated by magnetotransport measurements (up to 20 T) under hydrostatic pressure (up to 1.5 GPa). From the oscillatory behaviour of the magnetoresistance under pressure, the electron density in the GAMMA valley was directly evaluated. Furthermore, persistent photoconductivity was observed; illumination with a LED resulted in repopulation of the GAMMA continuum. Te, compared with other n-type dopants, exhibited an unusual behaviour; in Te-GaAs, metastable states did not merge into the gap even up to 1.5 GPa, whereas in Al0.21Ga0.79As with 2 x 10(18) cm-3 Te, DX levels lie 70 meV above the bottom of the GAMMA band. From the pressure dependence of the room-temperature photoluminescence of Te-GaAs, it was deduced that pinning of the Fermi level by DX states is unlikely to occur.

引用

页码：522 / 526

页数：5

共 23 条

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[5] see for instance Bourgoin JC, (1989)
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[8] Chadi DJ, Chang KJ, Phys. Rev., 39, 14, (1989)
[9] Yamaguchi E, The Origin of the DX Center in AlxGa1-xAs, Japanese Journal of Applied Physics, 25, (1986)
[10] Guzzi M, Staehli JL, 115, 2, (1989)

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