HIGH ASPECT RATIO, 0.1 MU-M STRUCTURES OBTAINED BY SINGLE LAYER RESIST AND CONVENTIONAL ELECTRON-BEAM LITHOGRAPHY

被引：2

作者：

GENTILI, M

GRELLA, L

LUCIANI, L

MASTROGIACOMO, L

SCOPA, L

机构：

[1] Istituto di Elettronica dello Stato Solido-CNR, I-00156 Roma

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90080-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High aspect ratio structures with dimension down to 0.12-mu-m are fabricated in thick single layer resist by means of a conventional Electron Beam Lithography(EBL) machine operating at medium accelerating voltage. Experimental and theoretical studies (Monte Carlo simulation) of the process variables, including the effect of beam voltage and exposure dosage (latitude experiment), showed that closely spaced 0.12-mu-m structures are possible in 1-mu-m thick resist even on bulk silicon at 40 KV. A systematic analysis of resist profiles (undercut angle) with varying writing dosage and accelerating voltage is also reported.

引用

页码：213 / 216

页数：4

共 4 条

[1] Shimkunas, Et al., Mask technology for X-ray step and repeat system, SPIE Proceedings E-Beam, X-Ray e Ion Beam Techniques for Submicrometer Lithographies, 5, (1986)
[2] Mohr, Et al., Requirements on resist layers in deep-etch synchrotron radiation lithography, J. Vac. Sc. Technol. B, 6, 6, (1988)
[3] van de Ven, Koek, 100 KV Electron Beam Lithography for high aspect ratio features smaller than 0.5 μm, Solid State Technology, (1990)
[4] Gentili, Et al., Electron scattering effects in master mask fabrication by single resist layer process for submicron X-ray lithography, J. Vac. Sc. Technol., (1989)

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