MASS ENHANCEMENT AND MAGNETIC ORDER AT THE MOTT-HUBBARD TRANSITION

We study the evolution with pressure P and band filling y of the heat capacity, Hall coefficient, and resistivity at the approach to the T --> 0 Mott-Hubbard metal-insulator transition (MIT) in highly correlated V2-yO3. Under P, the electronic effective mass m* diverges at the MIT with a negligible change in carrier concentration n away from half-filling. Conversely, in the doped system m* actually decreases as the MIT is approached, while n increases linearly with y. The low- T magnetic order in the metal helps us deconvolute contributions from charge correlations and spin fluctuations.