PROSPECTS FOR SILICON MONOLITHIC OPTOELECTRONICS WITH POLYMER LIGHT-EMITTING-DIODES

被引：20

作者：

KIM, HH ^{[1
]}

SWARTZ, RG ^{[1
]}

OTA, Y ^{[1
]}

WOODWARD, TK ^{[1
]}

FEUER, MD ^{[1
]}

WILSON, WL ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1994年 / 12卷 / 12期

关键词：

D O I：

10.1109/50.350619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated a monolithically integrated photodetector and amplifier in silicon bipolar technology and organic polymer light emitting diodes (LED's) using both poly (p-phenylene vinylene) (PPV) and its soluble derivative poly (2-methoxy, 5-(2'-ethyl-hexoxy)-1,4-phenylene vinylene) (MEH-PPV). Based on the individual capabilities of the photo-receiver and LED, we have begun to evaluate the feasibility of monolithic integration of opto-electronics for silicon chip-to-chip communication using both PPV-LED's and Si photoreceivers on Si chips. LED's made from PPV and its soluble derivative such as MEH-PPV are thought to be process-compatible with Si IC technology. However, as an additional requirement, the polymer LED's must emit large enough power to be detected by the receiver with an acceptable bit-error-rate (BER).

引用

页码：2114 / 2121

页数：8

共 27 条

[1] IMPROVED EFFICIENCY IN POLYMER LIGHT-EMITTING-DIODES USING AIR-STABLE ELECTRODES [J].