DIAMOND EPITAXIAL-GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH PURE METHANE

被引：13

作者：

NISHIMORI, T ^{[1
]}

SAKAMOTO, H ^{[1
]}

TAKAKUWA, Y ^{[1
]}

KONO, S ^{[1
]}

机构：

[1] TOHOKU UNIV, SCI MEASUREMENTS RES INST, AOBA KU, SENDAI, MIYAGI 98077, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 10A期

关键词：

DIAMOND; EPITAXIAL FILM; GAS SOURCE MBE; METHANE; RHEED; XPS; SELECTIVE GROWTH;

D O I：

10.1143/JJAP.34.L1297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond epitaxial films with a thickness of 200-350 Angstrom have been successfully grown on C(100) surfaces by gas-source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H-2 desorption on C(100), suggesting that the diamond epitaxial growth rate by this GSMBE is limited by hydrogen desorption.

引用

页码：L1297 / L1300

页数：4

共 16 条

[1] GROWTH OF DIAMOND SEED CRYSTALS BY VAPOR DEPOSITION [J].

ANGUS, JC ;

WILL, HA ;

STANKO, WS .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) :2915-&

[2] X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES OF ELECTRODE SURFACES USING A NEW CONTROLLED TRANSFER TECHNIQUE .2. RESULTS FOR A MOLYBDENUM ELECTRODE AND THE CURVE FITTING PROCEDURE [J].

ANSELL, RO ;

DICKINSON, T ;

POVEY, AF ;

SHERWOOD, PMA .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1979, 98 (01) :79-89

[3] TEMPERATURE AND CONCENTRATION DISTRIBUTION OF H2 AND H-ATOMS IN HOT-FILAMENT CHEMICAL-VAPOR DEPOSITION OF DIAMOND [J].

CHEN, KH ;

CHUANG, MC ;

PENNEY, CM ;

BANHOLZER, WF .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) :1485-1493

[4]

Eversole WG, 1962, US Patent, Patent No. 3030188

[5] THE ROLE OF HYDROGEN IN VAPOR-DEPOSITION OF DIAMOND [J].

FRENKLACH, M .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :5142-5149

[6] HYDROGEN CHEMISORPTION AND THE STRUCTURE OF THE DIAMOND C(100)-(2X1) SURFACE [J].

HAMZA, AV ;

KUBIAK, GD ;

STULEN, RH .

SURFACE SCIENCE, 1990, 237 (1-3) :35-52

[7] STRUCTURE AND TRIBOLOGY OF HARD CARBON-FILMS SYNTHESIZED BY ION-BEAM DEPOSITION [J].

HE, XM ;

LI, WZ ;

LI, HD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (06) :2964-2969

[8] HYDROGEN PLASMA INDUCED DEFECTS IN SILICON [J].

JENG, SJ ;

OEHRLEIN, GS ;

SCILLA, GJ .

APPLIED PHYSICS LETTERS, 1988, 53 (18) :1735-1737

[9] HYDROGEN PASSIVATION OF ELECTRICALLY ACTIVE DEFECTS IN DIAMOND [J].

LANDSTRASS, MI ;

RAVI, KV .

APPLIED PHYSICS LETTERS, 1989, 55 (14) :1391-1393

[10] KINETICS OF SILICON EPITAXY USING SIH4 IN A RAPID THERMAL CHEMICAL VAPOR-DEPOSITION REACTOR [J].

LIEHR, M ;

GREENLIEF, CM ;

KASI, SR ;

OFFENBERG, M .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :629-631

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