EFFECT OF THE STATISTICAL SHIFT ON THE ANOMALOUS CONDUCTIVITIES OF N-TYPE HYDROGENATED AMORPHOUS-SILICON

被引：41

作者：

YOON, BG

LEE, C

JANG, J

机构：

[1] KYUNG HEE UNIV, DEPT PHYS, SEOUL, SOUTH KOREA

[2] KOREA ADV INST SCI & TECHNOL, DEPT PHYS, SEOUL 131, SOUTH KOREA

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.337412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：673 / 676

页数：4

共 17 条

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[7] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J].

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[8]

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