LIGHT-ENHANCED HYDROGEN MOTION IN A-SI-H

被引：99

作者：

SANTOS, PV

JOHNSON, NM

STREET, RA

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.67.2686

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first direct observation of light-enhanced hydrogen motion in hydrogenated amorphous silicon. Diffusion enhancement increases with illumination intensity in undoped material and is suppressed in doped and in compensated material. The enhancement is attributed to an increased release rate of hydrogen from silicon-hydrogen bonds in the presence of photogenerated carriers. The implications of the effect for metastable defect formation are discussed.

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页码：2686 / 2689

页数：4

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