MONOLITHIC OPTOELECTRONIC TRANSISTOR - A NEW SMART-PIXEL DEVICE

被引：10

作者：

AULL, BF

NICHOLS, KB

MAKI, PA

PALMATEER, SC

BROWN, ER

LIND, TA

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.110747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new optical switching and logic device, the monolithic optoelectronic transistor (MOET), is demonstrated. The MOET is an integrated circuit consisting of a p-i-n photodiode, a resonant tunneling diode, a multiple-quantum-well modulator, and a field-effect transistor. The device can function as an optical inverter or NOR gate. Present devices switch at an input optical power of 12.5 muW and have a large-signal optical gain exceeding ten. The advantages of the MOET include abrupt switching thresholds, saturated ''on'' and ''off'' states, and nonlatching operation.

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页码：1555 / 1557

页数：3

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