PI-BOND STRENGTHS OF H2X = YH2 - X = GE OR SN, AND Y = C, SI, GE, OR SN

被引：92

作者：

WINDUS, TL

GORDON, MS

机构：

[1] N DAKOTA STATE UNIV, DEPT CHEM, FARGO, ND 58105 USA

[2] IOWA STATE UNIV SCI & TECHNOL, DEPT CHEM, AMES, IA 50011 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 1992年 / 114卷 / 24期

关键词：

D O I：

10.1021/ja00050a040

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The molecular structures and pi-bond strengths are determined using both MP2 and MCSCF + CI energies for a series of H-2X = YH2 compounds, where X = Ge or Sn and Y = C, Si, Ge, or Sn. These strengths are estimated both by evaluating the rotation barriers and by investigating the appropriate thermochemical cycles. The results show that C > Si is similar to Ge > Sn in their ability to form pi-bonds.

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页码：9559 / 9568

页数：10

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