JUNCTION COUNTERS PRODUCED BY IRRADIATION OF SILICON WITH DOPANT IONS

[1] DOPING OF CRYSTALS BY ION BOMBARDMENT TO PRODUCE SOLID STATE DETECTORS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (05) : 567 - &

[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 709 - 714

[3] SILICON P-N JUNCTION RADIATION DETECTORS FOR TELSTAR SATELLITE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 294 - +

[4] DABBS JWT, 1961, SEMICONDUCTOR NUC ED, P238

[5] DERNALEY G, 1963, SEMICONDUCTOR COUNTE, P93

[6] JACKSON RS, 1961, IRE T NUCLEAR SCI, VNS8, P29

[7] KING WJ, TO BE PUBLISHED

[8] KING WJ, 1965, JUN C EL IS SEP REL

[9] KING WJ, 1962, 58 EL DIV ABSTR

[10] JUNCTION COUNTERS PRODUCED BY ION IMPLANTATION DOPING [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 280 - +

[1] DOPING OF CRYSTALS BY ION BOMBARDMENT TO PRODUCE SOLID STATE DETECTORS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (05) : 567 - &

[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 709 - 714

[3] SILICON P-N JUNCTION RADIATION DETECTORS FOR TELSTAR SATELLITE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 294 - +

[4] DABBS JWT, 1961, SEMICONDUCTOR NUC ED, P238

[5] DERNALEY G, 1963, SEMICONDUCTOR COUNTE, P93

[6] JACKSON RS, 1961, IRE T NUCLEAR SCI, VNS8, P29

[7] KING WJ, TO BE PUBLISHED

[8] KING WJ, 1965, JUN C EL IS SEP REL

[9] KING WJ, 1962, 58 EL DIV ABSTR

[10] JUNCTION COUNTERS PRODUCED BY ION IMPLANTATION DOPING [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 280 - +