IMPROVED CRITICAL CURRENT DENSITIES IN NB3 AL BASED CONDUCTORS

被引：15

作者：

BRUZZESE, R ^{[1
]}

SACCHETTI, N ^{[1
]}

SPADONI, M ^{[1
]}

BARANI, G ^{[1
]}

DONATI, G ^{[1
]}

CERESARA, S ^{[1
]}

机构：

[1] CTR RIC LMI,LUCCA,ITALY

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 02期

关键词：

D O I：

10.1109/TMAG.1987.1064977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：653 / 656

页数：4

共 11 条

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[2]

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[3]

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[4]

BORMAN R, 1985, AUG CEC ICMC C BOST

[5]

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[6] NB3AL FORMATION AT TEMPERATURES LOWER THAN 1000 DEGREES C [J].

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[7] PRACTICAL NB3AL WIRES - EXPERIMENTAL BEHAVIOR OF SMALL-SCALE SOLENOIDS [J].

CERESARA, S ;

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[8]

CERESARA S, 1983, Patent No. 67378

[9] CRITICAL CURRENTS IN LIQUID-QUENCHED NB3AL [J].

LO, K ;

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[10]

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