PLASMA-ETCHING OF BETA-SIC

被引：25

作者：

KELNER, G

BINARI, SC

KLEIN, PH

机构：

[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 01期

关键词：

PLASMAS - Applications - SULFUR COMPOUNDS - Applications;

D O I：

10.1149/1.2100419

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper reports on the results of a room temperature SF//6 plasma etching technique, which does not redeposit a carbon layer on the surface, has a nonlimiting etch rate, and is compatible with conventional device fabrication techniques. This technique is a low temperature process, does not leave a carbon residue, and uses a simple masking procedure. These characteristics make SF//6 plasma etching useful for the fabrication of beta -SiC devices.

引用

页码：253 / 254

页数：2