GALVANOMAGNETIC PROPERTIES OF N-TYPE HG0.8CD0.2TE

被引：13

作者：

DORNHAUS, R ^{[1
]}

NIMTZ, G ^{[1
]}

SCHLABITZ, W ^{[1
]}

ZAPLINSKI, P ^{[1
]}

机构：

[1] UNIV COLOGNE, PHYS INST, COLOGNE, WEST GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1974年 / 15卷 / 03期

关键词：

D O I：

10.1016/0038-1098(74)91127-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：495 / 498

页数：4

共 19 条

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[3]

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SPAIN, IL .

SOLID STATE COMMUNICATIONS, 1970, 8 (24) :2063-&

[5] NEGATIVE MAGNETO-RESISTANCE DUE TO SCATTERING OF ELECTRONS BY IONIZED IMPURITIES [J].

GERHARDT.R ;

HAJDU, J .

SOLID STATE COMMUNICATIONS, 1971, 9 (18) :1607-&

[6] HIGH FIELD MAGNETORESISTANCE AT LOW TEMPERATURES [J].

GERHARDTS, R ;

HAJDU, J .

ZEITSCHRIFT FUR PHYSIK, 1971, 245 (02) :126-+

[7] NOTE ON HALL-EFFECT OF AN ELECTRON-GAS WITH RANDOM IMPURITY SCATTERING [J].

GERHARDTS, RR .

SOLID STATE COMMUNICATIONS, 1972, 10 (01) :107-+

[8]

GUREVICH VL, 1961, SOV PHYS JETP-USSR, V13, P137

[9] MAGNETOPHONON EFFECT IN TYPE HG1-X CDXTE(X=0.212) [J].

KAHLERT, H ;

BAUER, G .

PHYSICAL REVIEW LETTERS, 1973, 30 (24) :1211-1214

[10]

LONG D, 1970, SEMICONDUCTORS SEMIM, V5

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