TEMPERATURE-DEPENDENCE OF DC DRIFT OF TI-LINBO3 OPTICAL MODULATORS WITH SPUTTER-DEPOSITED SIO2 BUFFER LAYER

被引：33

作者：

NAGATA, H

KIUCHI, K

机构：

[1] Sumitomo Cement Company Ltd., Central Research Laboratories, Funabashi-shi, Chiba 274

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.352849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the dc drift of Mach-Zehnder external modulators is evaluated based on Ti diffused LiNbO3 with a sputter deposited SiO2 buffer layer. From Arrhenius' plots of the results, activation energies of the drift rate between 25 and 80-degrees-C were found to be about 1 eV. The activation energy seems to depend on the structural parameters of the SiO2 layer.

引用

页码：4162 / 4164

页数：3

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