OSCILLATORY CRYSTAL-GROWTH OF ALLOYS WITH THE MISCIBILITY GAP

被引：1

作者：

TEMKIN, DE ^{[1
]}

机构：

[1] IP BARDIN CENT FERROUS MET RES INST, MOSCOW 107005, RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 130卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90841-J

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An interface motion during crystal growth of an alloy having the miscibility gap controlled by the interface kinetics is considered. It is shown that within a certain range of parameters, a continuous spectrum of oscillatory solution exists. The interface velocity is a periodic function of time for these solutions, and the composition of solid is a continuous periodic function of the distance.

引用

页码：101 / 107

页数：7

共 12 条

[1]

Brener E. A., 1985, Soviet Physics - Crystallography, V30, P140

[2] SURFACE-LAYER SPINODAL DECOMPOSITION IN IN1-XGAXASYP1-Y AND IN1-XGAXAS GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J].

CHU, SNG ;

NAKAHARA, S ;

STREGE, KE ;

JOHNSTON, WD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4610-4615

[3]

GEILIKMAN MB, 1982, JETP LETT+, V36, P292

[4] GROWTH-KINETICS OF AN ALLOY WITH A MISCIBILITY GAP [J].

GEILIKMAN, MB ;

TEMKIN, DE .

JOURNAL OF CRYSTAL GROWTH, 1984, 67 (03) :607-626

[5] COMPOSITION MODULATION IN LIQUID-PHASE EPITAXIAL INXGA1-XASYP1-Y LAYERS LATTICE MATCHED TO INP SUBSTRATES [J].

HENOC, P ;

IZRAEL, A ;

QUILLEC, M ;

LAUNOIS, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :963-965

[6]

Khachaturyan AG., 1983, THEORY STRUCTURAL TR

[7]

Launois H., 1982, I PHYS C SER, V65, P537

[8]

MAKSIMOV K, 1979, SOV PHYS DOKL, V24, P297

[9]

Maksimov S. K., 1982, Soviet Physics - Solid State, V24, P355

[10] TRANSMISSION ELECTRON-MICROSCOPE AND TRANSMISSION ELECTRON-DIFFRACTION OBSERVATIONS OF ALLOY CLUSTERING IN LIQUID-PHASE EPITAXIAL (001) GAINASP LAYERS [J].

NORMAN, AG ;

BOOKER, GR .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4715-4720

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