KA-BAND MONOLITHIC INGAAS/INP HBT VCOS IN CPW STRUCTURE

被引：14

作者：

LIN, J

CHEN, YK

HUMPHREY, DA

HAMM, RA

MALIK, RJ

TATE, A

KOPF, RF

RYAN, RW

机构：

[1] AT&’T Bell Laboratories, Murray Hill

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 11期

关键词：

D O I：

10.1109/75.473536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two Ka-Band monolithic voltage controlled oscillators (VCO's) designed in coplanar waveguide (CPW) structure are described in this letter. Each VCO utilizes a InGaAs/InP heterojunction bipolar transistor (HBT) as the active device and a HBT base-collector junction as the tuning varactor. These two VCO's are biased at a very low voltage of V-CE = 1.5 V and the emitter current is less than 10 mA. Under this low dc power dissipation, the VCO's with center frequencies of 26.5 and 33.5 GHz show high dc-to-rf conversion efficiencies over 10% and 5% within the frequency tuning ranges of 1.6 and 1.2 GHz, respectively. The measured phase noise at 1 MHz offset frequency is -110 dBc/Hz.

引用

页码：379 / 381

页数：3

共 6 条

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[6]

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