DOPING PROFILES BY MOSFET DEEP DEPLETION C(V)

被引：15

作者：

BROWN, DM ^{[1
]}

CONNERY, RJ ^{[1
]}

GRAY, PV ^{[1
]}

机构：

[1] GE,SCHENECTADY,NY 12301

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 01期

关键词：

D O I：

10.1149/1.2134137

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：121 / 127

页数：7

相关论文

共 14 条

[1] ADDA LP, 1974, MAY EL SOC M SAN FRA
[2] CORRECTING INTERFACE-STATE ERRORS IN MOS DOPING PROFILE DETERMINATIONS
BREWS, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3228 - 3231
[3] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
GRAY, PV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +
[4] BROWN DM, 1969, MAY EL SOC M NEW YOR
[5] BROWN DM, 1971, IEEE T ELECTRON DEVI, VED18, P931
[6] BROWN DM, 1969, 69C168 GEN EL REP
[7] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS
GIBBONS, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 295 - +
[8] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
FITZGERALD, DJ
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +
[9] IMPURITY REDISTRIBUTION DURING SILICON EPITAXIAL-GROWTH AND SEMICONDUCTOR-DEVICE PROCESSING
LANGER, PH
GOLDSTEIN, JI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (04) : 563 - 571
[10] LIMITATION OF PULSED CAPACITANCE TECHNIQUE OF MEASURING IMPURITY PROFILES
LEBLANC, AR
KLEPPINGER, DD
WALSH, JP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1068 - +