GROWTH OF LARGE DIAMETER (HG,CD)TE CRYSTALS BY INCREMENTAL QUENCHING

被引：6

作者：

COLOMBO, L

SYLLAIOS, AJ

PERLAKY, RW

BRAU, MJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.573176

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：100 / 104

页数：5

共 9 条

[1]

ARPACI VS, 1966, CONDUCTION HEAT TRAN, P76

[2]

BRAU MJ, 1984, STATUS BULK HGCD TE

[3]

DUWEZ P, 1966, PROGR SOL STATE CHEM, V3, P377

[4] DIRECTIONAL CRYSTALLIZATION OF CDHGTE IN MICROGRAVITY CONDITIONS [J].

GALAZKA, RR ;

WARMINSKI, T ;

BAK, J ;

AULEYTNER, J ;

DIETL, T .

JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) :397-408

[5] ELECTRON-MICROPROBE TECHNIQUES FOR ROUTINE COMPOSITIONAL ANALYSIS OF (HG,CD)TE [J].

MOORE, TM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1651-1655

[6]

POLISAR EL, 1968, IZV VYSSHIKH UCHEBN, V6, P81

[7] THM, A BREAKTHROUGH IN HG1-XCDXTE BULK METALLURGY [J].

TRIBOULET, R ;

DUY, TN ;

DURAND, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :95-99

[8]

Ueda R., 1972, Journal of Crystal Growth, V13-14, P668, DOI 10.1016/0022-0248(72)90539-8

[9]

VERE AW, 1982, J CRYST GROWTH, V59, P121, DOI 10.1016/0022-0248(82)90312-8

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