MORPHOLOGICAL-STUDY OF AG, IN, SB, AND BI OVERLAYERS ON GAAS(100)

被引：32

作者：

SPINDT, CJ ^{[1
]}

CAO, R ^{[1
]}

MIYANO, KE ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

PAO, YC ^{[1
]}

机构：

[1] VARIAN ASSOCIATES INC,PALO ALTO,CA 94303

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：974 / 979

页数：6

共 17 条

[1] INVESTIGATION OF IN CONTACTS ON ATOMICALLY CLEAN GAAS(110) SURFACES [J].

CAO, R ;

MIYANO, K ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04) :3460-3465

[2] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J].

CAO, R ;

MIYANO, K ;

KENDELEWICZ, T ;

CHIN, KK ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :998-1002

[3] METAL CLUSTER FORMATION ON GAAS(110) - A TEMPERATURE-DEPENDENCE STUDY [J].

CAO, R ;

MIYANO, K ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1975-1982

[4] LACK OF TEMPERATURE-DEPENDENCE OF FERMI LEVEL PINNING AT THE CU/INP(110) INTERFACE - A COMPARISON WITH CU/GAAS AND OTHER SYSTEMS [J].

CAO, R ;

MIYANO, K ;

KENDELEWICZ, T ;

LINDAU, I ;

SPICER, WE .

APPLIED PHYSICS LETTERS, 1988, 53 (03) :210-212

[5] DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].

DUKE, CB ;

PATON, A ;

FORD, WK ;

KAHN, A ;

CARELLI, J .

PHYSICAL REVIEW B, 1982, 26 (02) :803-814

[6] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[7] EPITAXIAL-GROWTH OF BI ON GAAS(100) SURFACES [J].

HORNG, S ;

KAHN, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :931-935

[8] ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE [J].

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 13 (06) :2461-2469

[9] STRUCTURAL AND ELECTRONIC-PROPERTIES OF BI/GAAS(110) [J].

LUDEKE, R ;

TALEBIBRAHIMI, A ;

FEENSTRA, RM ;

MCLEAN, AB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :936-944

[10] CORE-LEVEL PHOTOEMISSION-STUDIES OF MBE-GROWN SEMICONDUCTOR SURFACES [J].

LUDEKE, R ;

CHIANG, TC ;

EASTMAN, DE .

PHYSICA B & C, 1983, 117 (MAR) :819-821

← 1 2 →