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TRANSPORT IN A SEMICONDUCTOR WITH ANISOTROPIC MOBILITIES AND PHOTOPIEZORESISTANCE EFFECT

被引：19
作者：
VANROOSBROECK, W
PFANN, WG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 07期
关键词：
D O I：
10.1063/1.1728950
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2304 / &
相关论文
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[4]   THE TRANSPORT OF ADDED CURRENT CARRIERS IN A HOMOGENEOUS SEMICONDUCTOR [J].
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[5]   THEORY OF THE FLOW OF ELECTRONS AND HOLES IN GERMANIUM AND OTHER SEMICONDUCTORS [J].
VANROOSBROECK, W .
BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04) :560-607
[6]  
Z?vetov?, 1959, CZECH J PHYS, V9, P572
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