GROWTH OF GAN THIN-FILMS FROM ACTIVE NITROGEN AND GACL

被引：8

作者：

LAPPA, R ^{[1
]}

GLOWACKI, G ^{[1
]}

GALKOWSKI, S ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,WARSAW,POLAND

来源：

THIN SOLID FILMS | 1976年 / 32卷 / 01期

关键词：

D O I：

10.1016/0040-6090(76)90560-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：73 / 75

页数：3

共 14 条

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[2]

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[3]

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[4]

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[6] PREPARATION AND STRUCTURAL PROPERTIES OF GAN THIN FILMS [J].

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[7] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

MARUSKA, HP ;

TIETJEN, JJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&

[8] VAPOR-PHASE EPITAXIAL-GROWTH OF GAN ON GAAS, GAP, SI, AND SAPPHIRE SUBSTRATES FROM GABR3 AND NH3 [J].

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UCHIHO, K ;

USHIO, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1783-1785

[9] PRODUCTION OF NITRIDES BY ACTIVE NITROGEN .1. GAN [J].

SHILOH, M ;

GUTMAN, J .

MATERIALS RESEARCH BULLETIN, 1973, 8 (06) :711-716

[10]

SWANN RCG, 1966, J ELECTROCHEM SOC, V113, pC315

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