CLUSTER-BETHE-LATTICE TREATMENT OF THE SILICON PAIR DEFECT IN GALLIUM-ARSENIDE

被引:4
作者
KLEINERT, P
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 117卷 / 02期
关键词
D O I
10.1002/pssb.2221170247
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:K91 / K94
页数:4
相关论文
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[2]   CLUSTER BETHE LATTICE TREATMENT FOR PHONONS IN PSEUDOBINARY ALLOY SYSTEMS [J].
KLEINERT, P .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 95 (01) :163-170
[3]  
KLEINERT P, UNPUB
[4]  
LEIGH RS, 1982, J PHYS C SOLID STATE, V15, pL1045
[5]   DIRECT EVIDENCE FOR THE SITE OF SUBSTITUTIONAL CARBON IMPURITY IN GAAS [J].
THEIS, WM ;
BAJAJ, KK ;
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SPITZER, WG .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :70-72