NEW LOW DARK CURRENT, HIGH-SPEED AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTODIODE BY MOLECULAR-BEAM EPITAXY FOR LONG WAVELENGTH FIBER OPTIC COMMUNICATION-SYSTEMS

被引:10
作者
CAPASSO, F
KASPER, B
ALAVI, K
CHO, AY
PARSEY, JM
机构
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D O I
10.1063/1.94633
中图分类号
O59 [应用物理学];
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页码:1027 / 1029
页数:3
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[5]   MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].
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