SPUTTER-INDUCED GRAIN-BOUNDARY JUNCTIONS IN YBA2CU3O7-X THIN-FILMS ON MGO

被引：13

作者：

VUCHIC, BV

MERKLE, KL

DEAN, KA

BUCHHOLZ, DB

CHANG, RPH

MARKS, LD

机构：

[1] ARGONNE NATL LAB, SCI & TECHNOL CTR SUPERCOND, ARGONNE, IL 60439 USA

[2] NORTHWESTERN UNIV, DEPT MAT SCI & ENGN, EVANSTON, IL 60208 USA

[3] NORTHWESTERN UNIV, SCI & TECHNOL CTR SUPERCOND, EVANSTON, IL 60208 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.358721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations. © 1995 American Institute of Physics.

引用

页码：2591 / 2594

页数：4

共 19 条

[1] SURFACE-MORPHOLOGY STUDIES OF Y-BA-CU-OXIDE THIN-FILMS PREPARED BY PULSED ORGANOMETALLIC BEAM EPITAXY [J].