KINETICS OF PLASMAS AND MELTING INDUCED IN SILICON AND GERMANIUM BY NANOSECOND LASER-PULSES

被引：32

作者：

PRESTON, JS ^{[1
]}

VANDRIEL, HM ^{[1
]}

机构：

[1] UNIV TORONTO,ERINDALE COLL,TORONTO M5S 1A7,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.30.1950

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1950 / 1956

页数：7

共 39 条

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[5]

BROWN WL, 1980, LASER ELECT BEAM PRO, P22

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BOK, J .

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[7] TIME-RESOLVED REFLECTIVITY MEASUREMENTS IN SILICON [J].

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BOK, J .

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[8]

DRABBLE JR, 1961, THERMAL CONDUCTION S, pCH4

[9]

Ehrenreich H, 1966, OPTICAL PROPERTIES S

[10]

GALKIN GN, 1968, JETP LETT, V1, P69

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