FULL-WAVE ANALYSIS AND ANALYTICAL FORMULAS FOR THE LINE PARAMETERS OF TRANSMISSION-LINES ON SEMICONDUCTOR SUBSTRATES

被引：50

作者：

GROTELUSCHEN, E ^{[1
]}

DUTTA, LS ^{[1
]}

ZAAGE, S ^{[1
]}

机构：

[1] UNIV HANNOVER, INFORMATIONSTECHNOL LAB, D-30167 HANNOVER, GERMANY

来源：

INTEGRATION-THE VLSI JOURNAL | 1993年 / 16卷 / 01期

关键词：

LOSSY TRANSMISSION LINES; FREQUENCY DEPENDENT LINE PARAMETERS; SEMICONDUCTOR SUBSTRATES;

D O I：

10.1016/0167-9260(93)90057-J

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The electrical properties of transmission lines on semiconductor substrates as used in common VLSI chips and MCMs are investigated. Since it is shown that for typical geometries the fields have quasi-TEM character for frequencies up to 20 GHz, analytical formulas for the frequency dependent complex line impedance and admittance (per unit length) are derived. The validity of these formulas is proved by comparison with results obtained from full-wave analyses using the Spectral-Domain-Approach and with experimental data gained from on-chip measurements. Furthermore a discussion of the calculated line parameters as functions of frequency, substrate conductivity and geometrical data is given.

引用

页码：33 / 58

页数：26

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