PLASMON LINEWIDTH IN METALS AND SEMICONDUCTORS - A MEMORY-FUNCTION APPROACH

被引：18

作者：

BELITZ, D

DASSARMA, S

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.34.8264

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8264 / 8269

页数：6

共 22 条

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