PERFORMANCE COMPARISON OF HIGHLY INTEGRATED-CIRCUITS - SILICON NMOS VERSUS GALLIUM-ARSENIDE NORMALLY-OFF MESFET TECHNOLOGY

被引：8

作者：

GESCH, H

KELLNER, W

KNIEPKAMP, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 12期

关键词：

D O I：

10.1109/T-ED.1983.21425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1640 / 1647

页数：8

共 25 条

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