SYNTHESIS OF MOSI2 SINGLE-CRYSTALS

A survey of a number of different techniques including electron beam float zone, inductively coupled plasma pedestal growth, and induction float zone in atmospheric and pressurized chambers was conducted for the synthesis of MoSi2 single crystals. These techniques were evaluated as to their suitability for growth of MoSi2. Of concern is the high vapor pressure of silicon at the melting point which can result in silicon loss and the formation of Mo5Si3. Of the techniques surveyed, pressurized induction float zone offers the best potential for compositional control during crystal growth. Some success is demonstrated using induction float zone techniques but, unfortunately, in order to maintain a stable liquid zone, crystal growth rates 3-5 times faster than typical float zone growth rates are necessary. As a result. the size of crystals prepared thus far is limited to approximately 3 mm in diameter.