HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE

被引：89

作者：

OTSUKA, N

CHOI, C

NAKAMURA, Y

NAGAKURA, S

FISCHER, R

PENG, CK

MORKOC, H

机构：

[1] TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.97140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：277 / 279

页数：3

共 10 条

[1] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

MASSELINK, WT ;

KLEM, J ;

HENDERSON, T ;

MCGLINN, TC ;

KLEIN, MV ;

MORKOC, H ;

MAZUR, JH ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381

[2]

KOLODZIEJSKI LA, J VAC SCI TECHNOL B

[3] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J].

MASSELINK, WT ;

HENDERSON, T ;

KLEM, J ;

FISCHER, R ;

PEARAH, P ;

MORKOC, H ;

HAFICH, M ;

WANG, PD ;

ROBINSON, GY .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1309-1311

[4] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[5]

NEUMANN DA, J VAC SCI TECHNOL B

[6] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324

[7]

TUNG SK, 1965, J ELECTROCHEM SOC, V129, P1078

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J].

WANG, WI .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1149-1151

[9]

WANG WI, 1986, 13TH ANN C PHYS CHEM

[10]

WANG WI, UNPUB J VAC SCI TE B

← 1 →