MODULATION OF A SEMICONDUCTOR-TO-SEMIMETAL TRANSITION AT 7-THZ VIA COHERENT LATTICE-VIBRATIONS

被引：51

作者：

CHENG, TK

ACIOLI, LH

VIDAL, J

ZEIGER, HJ

DRESSELHAUS, G

DRESSELHAUS, MS

IPPEN, EP

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

[2] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[3] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 16期

关键词：

D O I：

10.1063/1.109537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter introduces the general notion of significantly modulating the physical characteristics of a solid on a terahertz time scale with coherent lattice vibrations. We show, as an example, experiments in which coherent phonons are optically excited in single-crystal Ti2O3, which is a narrow-gap semiconductor at 300 K and gradually transforms into a semimetal at 600 K. Quantitative comparison of previous equilibrium measurements to our new transient measurements suggests that the induced coherent lattice vibration is significantly modulating the semiconductor-to-semimetal transition at 7 THz.

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页码：1901 / 1903

页数：3

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