TRANSITION FROM WEAK TO STRONG SPIN-ORBIT SCATTERING REGIME IN DIFFUSIVE INGAAS/INALAS QUANTUM WIRES

被引：4

作者：

FUKAI, YK ^{[1
]}

NAKANO, H ^{[1
]}

NAKATA, S ^{[1
]}

TARUCHA, S ^{[1
]}

ARAI, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 09期

关键词：

HETEROJUNCTIONS; NANOSTRUCTURES; QUANTUM LOCALIZATION; SPIN-ORBIT EFFECTS;

D O I：

10.1016/0038-1098(95)00103-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spin-orbit interaction in InGaAs/InAlAs quantum wires is investigated by measuring conductance fluctuations at temperatures ranging from 2 K down to 0.06 K. The resistance of an InGaAs/InAlAs wire in a zero magnetic field decreases as the temperature decreases below 1.6 K. This temperature dependence is reproduced by the theory of antilocalization in the strong spin-orbit interaction regime. In the same temperature range, the conductance fluctuation amplitude increases nonmonotonically with decreasing temperature. This behavior is attributed to the temperature-induced transition from the weak to the strong spin-orbit scattering regime in the mesoscopic disordered system.

引用

页码：757 / 761

页数：5

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