ELECTRON INJECTION EFFECTS IN POLYMER DIELECTRICS

Aluminum-polyimide-silicon (MIS) capacitors have been fabricated using high-resistivity p-type silicon substrates. Capacitance-voltage measurements have been carried out before and after voltage stressing, and on previously heat treated substrates. The voltage shift in the C-V curves is explained by electron injection and trapping in the polyimide layer, by analogy with the silicon dioxide system. The time dependence of the device characteristics suggests that a polyimide layer is not suitable for passivation of high-resistivity silicon junctions.