INVESTIGATION OF NEW DRY HIGH-SENSITIVE RESIST USING 100 KV ELECTRON LITHOGRAPHY

被引：4

作者：

BABIN, SV

HOLOPKIN, AI

LYAKHOV, MN

VALIEV, KA

VELIKOV, LV

ZHIKHAREV, EN

机构：

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)90161-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

100 KV electron beam lithography (EBL) system was used for octavinylsilsesquioxane film characterization as an electron resist for nanometer scale microstructuring. The resist processing was totally dry: deposition by evaporation in vacuum and thermal development after exposure. High resist sensitivity and nanometer scale resolution were obtained.

引用

页码：303 / 305

页数：3

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