DIRECT ELECTROOPTIC SAMPLING OF A GAAS INTEGRATED-CIRCUIT USING A GAIN-SWITCHED INGAASP INJECTION-LASER

被引：25

作者：

TAYLOR, AJ ^{[1
]}

TUCKER, RS ^{[1
]}

WIESENFELD, JM ^{[1
]}

BURRUS, CA ^{[1
]}

EISENSTEIN, G ^{[1
]}

TALMAN, JR ^{[1
]}

PEI, SS ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 20期

关键词：

INTEGRATED CIRCUITS; MONOLITHIC - Microwaves - INTEGRATED OPTICS - LASERS; INJECTION; -; Applications;

D O I：

10.1049/el:19860732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate an electro-optic sampling system based on a gain-switched InGaAsP injection laser. The system has a temporal resolution of 18 ps and is used for noninvasive probing of waveforms internal to a GaAs monolithic integrated circuit operating at 2. 4 GHz.

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收藏

页码：1068 / 1069

页数：2

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