LATTICE MISMATCH AT INTERFACE IN GAP-GAP AND GAA1AS-GAAS EPITAXIAL-GROWTH

被引：20

作者：

KISHINO, S ^{[1
]}

OGIRIMA, M ^{[1
]}

KAJIMURA, T ^{[1
]}

KURATA, K ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 24卷 / OCT期

关键词：

D O I：

10.1016/0022-0248(74)90316-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：266 / 271

页数：6

相关论文

共 8 条

[1] STRESSMODEL FOR HETEROEPITAXIAL MAGNETIC OXIDE FILMS GROWN BY CHEMICAL VAPOR DEPOSITION
BESSER, PJ
MEE, JE
ELKINS, PE
HEINZ, DM
[J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (11) : 1111 - &
[2] ETCHING STUDIES OF IMPURITY PRECIPITATES IN PULLED GAP CRYSTALS
IIZUKA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) : 1190 - &
[3] ISOMAE S, 1974, J CRYST GROWTH, V23
[4] CROSS-HATCH PATTERN IN GAAS1-XPX EPITAXIALLY GROWN ON GAAS SUBSTRATE
KISHINO, S
OGIRIMA, M
KURATA, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 617 - &
[5] PLANE DEFECT AT INTERFACE AND DISLOCATIONS IN EPITAXIALLY GROWN GAAS
KISHINO, S
LIDA, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1113 - &
[6] ENHANCED SENSITIVITY OF ANOMALOUSLY TRANSMITTED INTENSITY TO LATTICE-DEFECTS IN ASYMMETRIC BRAGG-CASE DIFFRACTION OF X-RAYS
KISHINO, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (04) : 587 - 593
[7] ROZGONYI GA, 1971, MAY M EL SOC
[8] MISFIT DISLOCATIONS IN BICRYSTALS OF EPITAXIALLY GROWN SILICON ON BORON-DOPED SILICON SUBSTRATES
SUGITA, Y
TAMURA, M
SUGAWARA, K
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3089 - &