ATOMIC DIFFUSION IN THIN-FILM REACTIONS

被引：9

作者：

GREER, AL

机构：

[1] University of Cambridge, Department of Materials Science and Metallurgy, Cambridge, CB2 3QZ, Pembroke Street

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1991年 / 134卷

关键词：

D O I：

10.1016/0921-5093(91)90971-O

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous interfacial reaction layers are widely found in metal-silicon and metal-metal thin film systems and may be significant in themselves or in controlling the selection of crystalline reaction products. Such layers show a marked asymmetry in the diffusivities of their component species. For early/late transition metal combinations it is suggested that the asymmetry leads to a loss of internal equilibrium in the amorphous phase during its formation. The implications of this loss for the thermodynamics and kinetics of amorphous phase growth are discussed.

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页码：1268 / 1273

页数：6

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