RECENT ADVANCES IN STRAIN GAUGES

被引:47
作者
HIGSON, GR
机构
来源
JOURNAL OF SCIENTIFIC INSTRUMENTS | 1964年 / 41卷 / 07期
关键词
D O I
10.1088/0950-7671/41/7/301
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:405 / &
相关论文
共 24 条
[1]  
BARKER RS, 1953, P SOC EXP STRESS ANA, V11, P119
[2]  
DORSEY J, 1963, SEMICONDUCTOR STRAIN
[3]   HIGH TEMPERATURE RESISTANCE STRAIN GAUGES [J].
EASTERLING, KE .
BRITISH JOURNAL OF APPLIED PHYSICS, 1963, 14 (02) :79-&
[4]  
EDWARDS J, 1962, INSTRUMENT PRACTICE, V16, P549
[5]  
FRANCK E, 1962, SEMICONDUCTOR CONVEN
[6]   SEMICONDUCTOR STRAIN TRANSDUCERS [J].
GEYLING, FT ;
FORST, JJ .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03) :705-731
[7]   TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].
HERRING, C .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290
[8]  
HETENYI M, 1950, HANDBOOK EXPERIMENTA
[9]   RESISTANCE STRAIN GAUGES OF LOW TEMPERATURE SENSITIVITY [J].
HIGSON, GR .
JOURNAL OF SCIENTIFIC INSTRUMENTS, 1959, 36 (04) :157-159
[10]  
HINES FH, 1962, SEMICONDUCTOR CONVEN