INTERFACIAL DEEP LEVELS RESPONSIBLE FOR SCHOTTKY-BARRIER FORMATION AT SEMICONDUCTOR METAL CONTACTS

被引：8

作者：

DOW, JD

SANKEY, OF

ALLEN, RE

机构：

[1] ARIZONA STATE UNIV, DEPT PHYS, TEMPE, AZ 85287 USA

[2] TEXAS A&M UNIV, DEPT PHYS, COLLEGE STN, TX 77843 USA

来源：

APPLICATIONS OF SURFACE SCIENCE | 1985年 / 22-3卷 / MAY期

关键词：

D O I：

10.1016/0378-5963(85)90227-2

中图分类号：

学科分类号：

摘要：

引用

页码：937 / 947

页数：11

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