MONOLITHIC INTEGRATION OF INAS PHOTODIODE AND GAAS-MESFET

被引：15

作者：

DOBBELAERE, W

DERAEDT, W

DEBOECK, J

MERTENS, R

BORGHS, G

机构：

[1] Interuniversity Micro-Electronics Center vzw, B-3001 Leuven

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 04期

关键词：

PHOTODIODES; FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920233

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs pn diodes were grown in wells pre-etched in GaAs substrates. Despite the large lattice mismatch of 7.2% between GaAs and InAs, good photodiode characteristics were obtained with 77K resistance area products of 70-OMEGA-cm2 and a peak detectivity of 1.25 x 10(11) cm square-root (Hz)/W at 2.95-mu-m wavelength. GaAs MESFETs were fabricated next to the embedded detectors, demonstrating for the first time the feasibility of the monolithic integration of InAs photodiodes and GaAs electronic circuits.

引用

页码：372 / 374

页数：3

共 5 条

[1] GROWTH AND STRUCTURAL CHARACTERIZATION OF EMBEDDED INASSB ON GAAS-COATED PATTERNED SILICON BY MOLECULAR-BEAM EPITAXY [J].