SPECTRAL AND TEMPORAL FEATURES OF PHOTOLUMINESCENCE OF GALLIUM-ARSENIDE QUANTUM-WIRE CRYSTALS

被引：10

作者：

OGAWA, K ^{[1
]}

HARAGUCHI, K ^{[1
]}

HIRUMA, K ^{[1
]}

FUJISAKI, Y ^{[1
]}

KATSUYAMA, T ^{[1
]}

FASOL, G ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT PHYS,CAMBRIDGE,ENGLAND

来源：

JOURNAL OF LUMINESCENCE | 1992年 / 53卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(92)90180-H

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Optical properties of GaAs quantum-wire crystals are investigated by means of time-resolved photoluminescence measurements. Recombination dynamics of carriers in the quantum-wire crystals are characterized on the basis of a rate equation which includes surface recombination and effect of depletion layer. Surface treatment with sulphur solution decreases significantly the surface charge density and surface recombination. Reduction in radiative life time is observed after the surface treatment. This implies that the modification of spatial profile of carrier wave functions is caused by a change in band bending at the surface.

引用

页码：387 / 390

页数：4