MONOLITHIC INTEGRATION OF AN AMPLIFIER AND A PHASE MODULATOR FABRICATED IN A GRINSCH-SQW STRUCTURE BY PLACING THE JUNCTION BELOW THE QUANTUM-WELL

被引：5

作者：

NO, KH

BLACKWELL, RJ

HERRICK, RW

LEVY, JL

机构：

[1] McDonnell Douglas, Electronic Systems, St. Louis

[2] Electrical Engineering, University of California, Santa Barbara

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 09期

关键词：

D O I：

10.1109/68.257168

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results of a novel semiconductor optical amplifier device in which an amplifier and a phase modulator are integrated into a fundamental transverse-mode ridge wave-guide. By placing the p-n junction below the quantum well (QW) during epitaxial growth and utilizing the effect of the electric field on the depletion width, the phase of the light from an integrated optical amplifier-modulator is varied. For a modulation reverse bias voltage range of 0.4 V, we have demonstrated a 360-degrees/mm phase shift with less than 1.2 dB of amplitude modulation.

引用

页码：990 / 993

页数：4

共 6 条

[1] ORIENTATION DEPENDENCE OF THE PHASE MODULATION IN A P-N-JUNCTION GAAS/ALXGA1-XAS WAVE-GUIDE [J].