GLASS-FORMATION IN THE SYSTEM BAS-GA2S3-GES2 AND THE STRUCTURE OF BA2.7GA5.4GE3.6S18

被引：10

作者：

HAEUSELER, H

SCHMIDT, C

机构：

[1] Laboratorium für Anorganische Chemie, Universität Siegen

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1994年 / 204卷 / 1-2期

关键词：

D O I：

10.1016/0925-8388(94)90093-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The title system has been investigated by X-ray powder diffraction methods on samples tempered at 1300, 1100 and 900 K. A large temperature-dependent area is found in which the samples form glasses. A new crystalline compound of composition Ba2.7Ga5.4Ge3.6S18 has been found, crystallizing trigonally in space group R3 with a = 9.600 angstrom and c = 8.684 angstrom. The crystal structure of this compound has been determined from single-crystal X-ray diffraction data and refined to R=0.101 (R(w)=0.13). Ba and S together form a distorted c.c.p. array in which Ga and Ge occupy tetrahedral sites.

引用

页码：209 / 213

页数：5

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